SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

A method for manufacturing a semiconductor structure includes: forming first base which includes first substrate and active areas arranged in an array along first direction and second direction in first substrate, word lines being disposed in first base, extending along second direction and covering...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: GUI, Huihui
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator GUI, Huihui
description A method for manufacturing a semiconductor structure includes: forming first base which includes first substrate and active areas arranged in an array along first direction and second direction in first substrate, word lines being disposed in first base, extending along second direction and covering at least opposite sides of each active area; forming charge storage structures electrically connected with first ends of active areas on first base; forming second base which includes second substrate and bit lines disposed in second substrate, bit lines extending along first direction; connecting first base and second base by using a first surface of first base away from charge storage structures and a second surface of second base having structures of bit lines as connection surfaces, bit lines being electrically connected with second ends of active areas, and each first end being disposed opposite to a corresponding second end.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024107740A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024107740A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024107740A13</originalsourceid><addsrcrecordid>eNrjZLAMdvX1dPb3cwl1DvEPUggOCQIyQoNcFRz9XBR8XUM8_F0U3IASvo5-oW6OIClPP3eFYEdfVx4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEh8abGRgZGJoYG5uYuBoaEycKgBYDynv</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME</title><source>esp@cenet</source><creator>GUI, Huihui</creator><creatorcontrib>GUI, Huihui</creatorcontrib><description>A method for manufacturing a semiconductor structure includes: forming first base which includes first substrate and active areas arranged in an array along first direction and second direction in first substrate, word lines being disposed in first base, extending along second direction and covering at least opposite sides of each active area; forming charge storage structures electrically connected with first ends of active areas on first base; forming second base which includes second substrate and bit lines disposed in second substrate, bit lines extending along first direction; connecting first base and second base by using a first surface of first base away from charge storage structures and a second surface of second base having structures of bit lines as connection surfaces, bit lines being electrically connected with second ends of active areas, and each first end being disposed opposite to a corresponding second end.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240328&amp;DB=EPODOC&amp;CC=US&amp;NR=2024107740A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240328&amp;DB=EPODOC&amp;CC=US&amp;NR=2024107740A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GUI, Huihui</creatorcontrib><title>SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME</title><description>A method for manufacturing a semiconductor structure includes: forming first base which includes first substrate and active areas arranged in an array along first direction and second direction in first substrate, word lines being disposed in first base, extending along second direction and covering at least opposite sides of each active area; forming charge storage structures electrically connected with first ends of active areas on first base; forming second base which includes second substrate and bit lines disposed in second substrate, bit lines extending along first direction; connecting first base and second base by using a first surface of first base away from charge storage structures and a second surface of second base having structures of bit lines as connection surfaces, bit lines being electrically connected with second ends of active areas, and each first end being disposed opposite to a corresponding second end.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMdvX1dPb3cwl1DvEPUggOCQIyQoNcFRz9XBR8XUM8_F0U3IASvo5-oW6OIClPP3eFYEdfVx4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEh8abGRgZGJoYG5uYuBoaEycKgBYDynv</recordid><startdate>20240328</startdate><enddate>20240328</enddate><creator>GUI, Huihui</creator><scope>EVB</scope></search><sort><creationdate>20240328</creationdate><title>SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME</title><author>GUI, Huihui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024107740A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GUI, Huihui</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GUI, Huihui</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME</title><date>2024-03-28</date><risdate>2024</risdate><abstract>A method for manufacturing a semiconductor structure includes: forming first base which includes first substrate and active areas arranged in an array along first direction and second direction in first substrate, word lines being disposed in first base, extending along second direction and covering at least opposite sides of each active area; forming charge storage structures electrically connected with first ends of active areas on first base; forming second base which includes second substrate and bit lines disposed in second substrate, bit lines extending along first direction; connecting first base and second base by using a first surface of first base away from charge storage structures and a second surface of second base having structures of bit lines as connection surfaces, bit lines being electrically connected with second ends of active areas, and each first end being disposed opposite to a corresponding second end.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2024107740A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T01%3A04%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=GUI,%20Huihui&rft.date=2024-03-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024107740A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true