3D UFET DEVICES AND METHODS FOR MANUFACTURING THE SAME

3D UFET DEVICES AND METHODS FOR MANUFACTURING THE SAME

Semiconductor devices and methods of manufacture are disclosed. The method includes forming a stack including a first pair of metal layers separated with a first dielectric layer and a second pair of metal layers separated with a second dielectric layer. The method includes separating the stack into...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Fulford, H. Jim, Gardner, Mark I
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Semiconductor devices and methods of manufacture are disclosed. The method includes forming a stack including a first pair of metal layers separated with a first dielectric layer and a second pair of metal layers separated with a second dielectric layer. The method includes separating the stack into a first portion of the first pair of metal layers and the first dielectric layer, a second portion of the first pair of metal layers and the first dielectric layer, a third portion of the second pair of metal layers and the second dielectric layer, and a fourth portion of the second pair of metal layers and the second dielectric layer. The method for fabricating semiconductor devices includes indenting, the first to fourth portions to form first to fourth recesses, respectively, and forming first to fourth transistors, respectively.