SUBSTRATE PROCESSING APPARATUS AND METHOD OF PROCESSING SUBSTRATE BY USING THE SAME

A substrate processing apparatus including a first chamber configured to accommodate a substrate therein and a second chamber including a heater provided in an internal space thereof, wherein the first chamber includes a target assembly configured to fix a target including a deposition material, a first ion gun configured to irradiate an ion beam onto the target to discharge deposition particles, which are ions of the deposition material, to the substrate, and a second ion gun configured to irradiate a hydrogen ion beam toward the substrate, the second ion gun includes a plasma generator configured to generate plasma, and a first grid electrode and a second grid electrode each configured to extract ions from the container, and the second chamber is configured to be provided with the substrate, on which the hydrogen ion beam has been irradiated, and perform thermal treatment on the substrate.