INTEGRATED CIRCUIT (IC) DEVICE WITH HYBRID METAL LAYER

INTEGRATED CIRCUIT (IC) DEVICE WITH HYBRID METAL LAYER

An IC device includes a transistor, a first layer, and a second layer. The first layer is coupled to the transistors and is between the transistor and the second layer in a first direction. The first layer includes a first structure and a second structure. The first structure includes a first metal...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Choi, June, Schenker, Richard E, Wallace, Charles Henry, Mehta, Nikhil Jasvant
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An IC device includes a transistor, a first layer, and a second layer. The first layer is coupled to the transistors and is between the transistor and the second layer in a first direction. The first layer includes a first structure and a second structure. The first structure includes a first metal (e.g., Ru). The second structure includes a second metal (e.g., Cu). The second structure may be wrapped around by a different material that may include a third metal (e.g., Co). The first structure may be shorter than the second structure in the first direction and narrower than the second structure in a second direction orthogonal to the first direction. The first structure may be closer to the second layer than the second structure in the first direction. The first structure may be a wordline of a memory. The second structure may be a bitline.