MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS

MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS

A grain-boundary self-aligned resistive memory structure is provided enabling the closely-packed formation of multiple, oxide-based, ReRAM elements in parallel, each with its own compliance resistor. The structure is capable of forming multiple filaments, one per element, with the aim of reducing th...

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Bibliographische Detailangaben
Hauptverfasser: Cartier, Eduard Albert, Solomon, Paul Michael, Ando, Takashi, Rozen, John
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A grain-boundary self-aligned resistive memory structure is provided enabling the closely-packed formation of multiple, oxide-based, ReRAM elements in parallel, each with its own compliance resistor. The structure is capable of forming multiple filaments, one per element, with the aim of reducing the variability in the composite ReRAM cell.