Pillar Based Memory (MRAM) Embedded within the Buried Power Rail within a Backside Power Distribution Network

An apparatus comprising a backside power distribution network; a backside power rail joined to the backside power distribution network; and a backside contact via that couples at least one front end of line transistor to the backside power rail; wherein the backside contact via comprises a pillar ba...

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Bibliographische Detailangaben
Hauptverfasser: Tsai, Wu-Chang, Rizzolo, Michael, Reznicek, Alexander, Zhao, Ailian
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
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Beschreibung
Zusammenfassung:An apparatus comprising a backside power distribution network; a backside power rail joined to the backside power distribution network; and a backside contact via that couples at least one front end of line transistor to the backside power rail; wherein the backside contact via comprises a pillar based memory device.