SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP

Self-aligned gate endcap (SAGE) architectures without fin end gaps, and methods of fabricating self-aligned gate endcap (SAGE) architectures without fin end gaps, are described. In an example, an integrated circuit structure includes a semiconductor fin having a cut along a length of the semiconduct...

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Hauptverfasser: CLENDENNING, Scott B, BAUMGARTEL, Lukas, CHIKKADI, Kiran, LANCASTER, Diane, MITAN, Martin M, Liao, Szuya S, GSTREIN, Florian, METZ, Matthew V, HOURANI, Rami, TORRES, Jessica
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Self-aligned gate endcap (SAGE) architectures without fin end gaps, and methods of fabricating self-aligned gate endcap (SAGE) architectures without fin end gaps, are described. In an example, an integrated circuit structure includes a semiconductor fin having a cut along a length of the semiconductor fin. A gate endcap isolation structure has a first portion parallel with the length of the semiconductor fin and is spaced apart from the semiconductor fin. The gate endcap isolation structure also has a second portion in a location of the cut of the semiconductor fin and in contact with the semiconductor fin.