Structure and Method of Fabrication for High Performance Integrated Passive Device

Structure and Method of Fabrication for High Performance Integrated Passive Device

Microelectronic modules are described. In an embodiment, a microelectronic module includes a module substrate, a chip mounted onto the module substrate, and a semiconductor-based integrated passive device between the chip and the module substrate. The semiconductor-based integrated passive device ma...

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Bibliographische Detailangaben
Hauptverfasser: Govindaraj, Rekha, Zhai, Jun, Yan, Zhuo, Huang, Long, Sinha, Saurabh P, Oliva, Antonietta, Hsieh, Chueh-An, Ramachandran, Vidhya, Ni, Chi Nung, Mandrekar, Rohan U, Gandhi, Saumya K, Yang, Yizhang
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Microelectronic modules are described. In an embodiment, a microelectronic module includes a module substrate, a chip mounted onto the module substrate, and a semiconductor-based integrated passive device between the chip and the module substrate. The semiconductor-based integrated passive device may include an upper RDL stack-up with thicker wiring layers than a lower BEOL stack-up. The semiconductor-based integrated passive device may be further solder bonded or hybrid bonded with the chip.