ASYMMETRY CORRECTION VIA ORIENTED WAFER LOADING

A method for chemical mechanical polishing includes receiving an angular removal profile for a carrier head and an angular thickness profile of a substrate. Prior to polishing the substrate, a desired angle of the carrier head relative to the substrate is selected for loading the substrate into the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Garretson, Charles C, Zhang, Huanbo, Lau, Eric, Zhu, Zhize
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHAMBERS PROVIDED WITH MANIPULATION DEVICES DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING HAND TOOLS MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MANIPULATORS PERFORMING OPERATIONS POLISHING PORTABLE POWER-DRIVEN TOOLS SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A method for chemical mechanical polishing includes receiving an angular removal profile for a carrier head and an angular thickness profile of a substrate. Prior to polishing the substrate, a desired angle of the carrier head relative to the substrate is selected for loading the substrate into the carrier head. Selecting the desired angle is performed based on a comparison of the angular removal profile for the carrier head and the angular thickness profile of the substrate to reduce angular non-uniformity in polishing. The carrier head is rotated to receive the substrate at the desired angle, the substrate is transferred to the carrier head and loaded in the carrier head with the carrier head at the desired angle relative to the substrate, and the substrate is polished.