SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

According to the present disclosure, there is provided a technique capable of suppressing a replacement of a quartz vessel due to an occurrence of a crack of the quartz vessel. There is provided a technique including: a quartz vessel provided with a process chamber; a gas supplier; a coil surroundin...

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Hauptverfasser: FUNAKI, Katsunori, TAKESHIMA, Yuichiro, NGUYEN, Van Chieu, HARADA, Koichiro
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creator FUNAKI, Katsunori
TAKESHIMA, Yuichiro
NGUYEN, Van Chieu
HARADA, Koichiro
description According to the present disclosure, there is provided a technique capable of suppressing a replacement of a quartz vessel due to an occurrence of a crack of the quartz vessel. There is provided a technique including: a quartz vessel provided with a process chamber; a gas supplier; a coil surrounding the quartz vessel and configured to excite a process gas by a plasma generated by supplying a high frequency power to the coil, wherein a distance between the coil and an outer peripheral surface of a first portion of the quartz vessel is set to be greater than a distance between the coil and an outer peripheral surface of a second portion of the quartz vessel, and wherein a silicon hydroxide film is formed on an inner peripheral surface of the first portion and the silicon hydroxide film is not formed on an inner peripheral surface of the second portion.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
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