SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

According to the present disclosure, there is provided a technique capable of suppressing a replacement of a quartz vessel due to an occurrence of a crack of the quartz vessel. There is provided a technique including: a quartz vessel provided with a process chamber; a gas supplier; a coil surroundin...

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Bibliographische Detailangaben
Hauptverfasser:	FUNAKI, Katsunori, TAKESHIMA, Yuichiro, NGUYEN, Van Chieu, HARADA, Koichiro
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	According to the present disclosure, there is provided a technique capable of suppressing a replacement of a quartz vessel due to an occurrence of a crack of the quartz vessel. There is provided a technique including: a quartz vessel provided with a process chamber; a gas supplier; a coil surrounding the quartz vessel and configured to excite a process gas by a plasma generated by supplying a high frequency power to the coil, wherein a distance between the coil and an outer peripheral surface of a first portion of the quartz vessel is set to be greater than a distance between the coil and an outer peripheral surface of a second portion of the quartz vessel, and wherein a silicon hydroxide film is formed on an inner peripheral surface of the first portion and the silicon hydroxide film is not formed on an inner peripheral surface of the second portion.