VERTICAL TRANSISTOR WITH SELF- ALIGN BACKSIDE CONTACT

A semiconductor structure including a fin of a vertical transistor structure, a top source drain region on a top side of the fin, a bottom source drain region on a bottom side of the fin, and a backside contact below and contacting the bottom source drain region.

Bibliographische Detailangaben

Hauptverfasser:	Anderson, Brent A, Xie, Ruilong, Strane, Jay William, Fan, Su Chen
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!