VERTICAL TRANSISTOR WITH SELF- ALIGN BACKSIDE CONTACT

VERTICAL TRANSISTOR WITH SELF- ALIGN BACKSIDE CONTACT

A semiconductor structure including a fin of a vertical transistor structure, a top source drain region on a top side of the fin, a bottom source drain region on a bottom side of the fin, and a backside contact below and contacting the bottom source drain region.

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Bibliographische Detailangaben
Hauptverfasser: Anderson, Brent A, Xie, Ruilong, Strane, Jay William, Fan, Su Chen
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor structure including a fin of a vertical transistor structure, a top source drain region on a top side of the fin, a bottom source drain region on a bottom side of the fin, and a backside contact below and contacting the bottom source drain region.