VERTICAL TRANSISTOR WITH SELF- ALIGN BACKSIDE CONTACT

A semiconductor structure including a fin of a vertical transistor structure, a top source drain region on a top side of the fin, a bottom source drain region on a bottom side of the fin, and a backside contact below and contacting the bottom source drain region.

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Hauptverfasser:	Anderson, Brent A, Xie, Ruilong, Strane, Jay William, Fan, Su Chen
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	Anderson, Brent A Xie, Ruilong Strane, Jay William Fan, Su Chen
description	A semiconductor structure including a fin of a vertical transistor structure, a top source drain region on a top side of the fin, a bottom source drain region on a bottom side of the fin, and a backside contact below and contacting the bottom source drain region.
format	Patent
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title	VERTICAL TRANSISTOR WITH SELF- ALIGN BACKSIDE CONTACT
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