OPERATION METHOD OF MEMORY DEVICE

Disclosed is an operation method of a memory device which includes a plurality of memory cells stacked in a direction perpendicular to a substrate and a plurality of word lines respectively connected with the plurality of memory cells. The method includes applying a 0-th pass voltage to a first sele...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KIM, Seongyong, HONG, Hyeyoung, YANG, Miju, SEO, Jun-Ho
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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