REFLECTIVE MASK BLANK AND METHOD FOR MANUFACTURING REFLECTIVE MASK

A reflective mask blank has: a substrate; a multilayer reflective film that is provided on one surface of the substrate and reflects at least EUV light; and a back conductive film that is provided on the other surface of the substrate. The back conductive film has a layer which has a film thickness...

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Bibliographische Detailangaben
Hauptverfasser:	KOSAKA, Takuro, OGOSE, Taiga
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	A reflective mask blank has: a substrate; a multilayer reflective film that is provided on one surface of the substrate and reflects at least EUV light; and a back conductive film that is provided on the other surface of the substrate. The back conductive film has a layer which has a film thickness of 50 nm or more and less than 80 nm, contains tantalum (Ta), silicon (Si) and nitrogen (N), has a nitrogen content of 18 atom % or more and less than 35 atom %, and has a CSi/(CTa+CSi) of 3% or more and less than 50% when a silicon content in atom % is denoted by CSi and a tantalum content in atom % is denoted by CTa.