MEMORY DEVICE

MEMORY DEVICE

According to one embodiment, a memory device includes a first substrate and a second substrate. The first substrate is provided with a first circuit layer on a front surface. The first circuit layer includes a CMOS circuit. The second substrate has a front surface that faces the first substrate. The...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KUBOTA, Keisuke, IWASAKI, Taichi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:According to one embodiment, a memory device includes a first substrate and a second substrate. The first substrate is provided with a first circuit layer on a front surface. The first circuit layer includes a CMOS circuit. The second substrate has a front surface that faces the first substrate. The second substrate is provided with a second circuit layer on the front surface contacting the first circuit layer. The second substrate includes a memory circuit and transistors of a silicon-on-insulator (SOI) structure.