INTEGRATED CIRCUIT DEVICE
An integrated circuit (IC) device may include a conductive area on a substrate; a first electrode connected to the conductive area on the substrate, a width of the first electrode in a lateral direction gradually increasing toward the substrate; a second electrode on the substrate, the second electr...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | An integrated circuit (IC) device may include a conductive area on a substrate; a first electrode connected to the conductive area on the substrate, a width of the first electrode in a lateral direction gradually increasing toward the substrate; a second electrode on the substrate, the second electrode including a silicon germanium (SiGe) film, the SiGe film surrounding the first electrode; and a dielectric film between the first electrode and the second electrode. A content of a component of the SiGe film may vary according to a distance from the substrate. |
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