T-GATE TRANSISTOR WITH MINI FIELD PLATE AND ANGLED GATE STEM

T-GATE TRANSISTOR WITH MINI FIELD PLATE AND ANGLED GATE STEM

A transistor and method of fabricating the same comprising a channel layer; an epitaxial barrier layer on the channel layer; an epitaxial cap layer on the epitaxial barrier layer; a dielectric layer on the epitaxial cap layer having an opening through to the epitaxial barrier layer; a gate having an...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Dejarld, Matthew Thomas, Tahhan, Maher Bishara, Chumbes, Eduardo M, Hunley, David Patrick
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A transistor and method of fabricating the same comprising a channel layer; an epitaxial barrier layer on the channel layer; an epitaxial cap layer on the epitaxial barrier layer; a dielectric layer on the epitaxial cap layer having an opening through to the epitaxial barrier layer; a gate having angled sidewalls in the opening of the dielectric layer; a mini field plate having angled sidewalls on the gate; and a gate top on the mini field plate, wherein the gate, the mini field plate, and the gate top form a "T" shape.