INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHODS OF FABRICATION THE SAME

INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHODS OF FABRICATION THE SAME

An integrated circuit device may comprise an upper transistor that is on a substrate. The upper transistor may comprise an upper channel region. The integrated circuit device may further comprise a lower transistor that is between the substrate and the upper transistor. The lower transistor may comp...

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Bibliographische Detailangaben
Hauptverfasser: Seo, Kang-ill, Song, Seungmin, Jung, Myunghoon, Yun, Seungchan, Park, Keumseok
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit device may comprise an upper transistor that is on a substrate. The upper transistor may comprise an upper channel region. The integrated circuit device may further comprise a lower transistor that is between the substrate and the upper transistor. The lower transistor may comprise a lower channel region. The integrated circuit device may further include an integrated insulator that is between the lower channel region and the upper channel region. The integrated insulator may comprise an outer layer and an inner layer in the outer layer, wherein the inner layer and the outer layer comprise different materials.