ACTIVE AREA SALICIDATION FOR NMOS AND PMOS DEVICES

A variety of applications can include apparatus having p-channel metal-oxide-semiconductor (PMOS) transistors and n-channel metal-oxide-semiconductor (NMOS) transistors with different metal silicide contacts. The active area of the NMOS transistor can include a first metal silicide having a first me...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Weimer, Ronald Allen, Petz, Christopher W, Miyashita, Toshihiko, Mocuta, Dan Mihai
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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