IN-CHAMBER METROLOGY OF SUBSTRATES FOR PROCESS CHARACTERIZATION AND IMPROVEMENT

IN-CHAMBER METROLOGY OF SUBSTRATES FOR PROCESS CHARACTERIZATION AND IMPROVEMENT

A method includes receiving, by a processing device, first data generated by a first sensor of a substrate processing system. The first data is generated responsive to the first sensor receiving electromagnetic radiation from a substrate held by a robot arm of a transfer chamber in the substrate pro...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Roy, Tapashree, Gupta, Nitin, Egan, Todd, Bavigadda, Viswanath
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Roy, Tapashree
Gupta, Nitin
Egan, Todd
Bavigadda, Viswanath
description A method includes receiving, by a processing device, first data generated by a first sensor of a substrate processing system. The first data is generated responsive to the first sensor receiving electromagnetic radiation from a substrate held by a robot arm of a transfer chamber in the substrate processing system. The method further includes processing the first data to obtain second data. The second data includes a first indication of performance of the substrate processing system. The method further includes causing, in view of the second data, performance of a corrective actions associated with the substrate processing system.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024071792A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024071792A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024071792A13</originalsourceid><addsrcrecordid>eNqNyrEKwjAQgOEsDqK-w4Fzoa1C6ZjGiw2YnFyugi6lSJxEC_X9sYMP4PQP_7dU5EJmWu0bZPAoTCc6XoEsxK6JwlowgiWGM5PBGGG2rI0gu5sWRwF0OIDz876gxyBrtXgMzyltfl2prUUxbZbGd5-mcbinV_r0XSzzcp9XRVWXutj9p74viDAl</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>IN-CHAMBER METROLOGY OF SUBSTRATES FOR PROCESS CHARACTERIZATION AND IMPROVEMENT</title><source>esp@cenet</source><creator>Roy, Tapashree ; Gupta, Nitin ; Egan, Todd ; Bavigadda, Viswanath</creator><creatorcontrib>Roy, Tapashree ; Gupta, Nitin ; Egan, Todd ; Bavigadda, Viswanath</creatorcontrib><description>A method includes receiving, by a processing device, first data generated by a first sensor of a substrate processing system. The first data is generated responsive to the first sensor receiving electromagnetic radiation from a substrate held by a robot arm of a transfer chamber in the substrate processing system. The method further includes processing the first data to obtain second data. The second data includes a first indication of performance of the substrate processing system. The method further includes causing, in view of the second data, performance of a corrective actions associated with the substrate processing system.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CALCULATING ; COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS ; COMPUTING ; COUNTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240229&amp;DB=EPODOC&amp;CC=US&amp;NR=2024071792A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240229&amp;DB=EPODOC&amp;CC=US&amp;NR=2024071792A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Roy, Tapashree</creatorcontrib><creatorcontrib>Gupta, Nitin</creatorcontrib><creatorcontrib>Egan, Todd</creatorcontrib><creatorcontrib>Bavigadda, Viswanath</creatorcontrib><title>IN-CHAMBER METROLOGY OF SUBSTRATES FOR PROCESS CHARACTERIZATION AND IMPROVEMENT</title><description>A method includes receiving, by a processing device, first data generated by a first sensor of a substrate processing system. The first data is generated responsive to the first sensor receiving electromagnetic radiation from a substrate held by a robot arm of a transfer chamber in the substrate processing system. The method further includes processing the first data to obtain second data. The second data includes a first indication of performance of the substrate processing system. The method further includes causing, in view of the second data, performance of a corrective actions associated with the substrate processing system.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CALCULATING</subject><subject>COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQgOEsDqK-w4Fzoa1C6ZjGiw2YnFyugi6lSJxEC_X9sYMP4PQP_7dU5EJmWu0bZPAoTCc6XoEsxK6JwlowgiWGM5PBGGG2rI0gu5sWRwF0OIDz876gxyBrtXgMzyltfl2prUUxbZbGd5-mcbinV_r0XSzzcp9XRVWXutj9p74viDAl</recordid><startdate>20240229</startdate><enddate>20240229</enddate><creator>Roy, Tapashree</creator><creator>Gupta, Nitin</creator><creator>Egan, Todd</creator><creator>Bavigadda, Viswanath</creator><scope>EVB</scope></search><sort><creationdate>20240229</creationdate><title>IN-CHAMBER METROLOGY OF SUBSTRATES FOR PROCESS CHARACTERIZATION AND IMPROVEMENT</title><author>Roy, Tapashree ; Gupta, Nitin ; Egan, Todd ; Bavigadda, Viswanath</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024071792A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CALCULATING</topic><topic>COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Roy, Tapashree</creatorcontrib><creatorcontrib>Gupta, Nitin</creatorcontrib><creatorcontrib>Egan, Todd</creatorcontrib><creatorcontrib>Bavigadda, Viswanath</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Roy, Tapashree</au><au>Gupta, Nitin</au><au>Egan, Todd</au><au>Bavigadda, Viswanath</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>IN-CHAMBER METROLOGY OF SUBSTRATES FOR PROCESS CHARACTERIZATION AND IMPROVEMENT</title><date>2024-02-29</date><risdate>2024</risdate><abstract>A method includes receiving, by a processing device, first data generated by a first sensor of a substrate processing system. The first data is generated responsive to the first sensor receiving electromagnetic radiation from a substrate held by a robot arm of a transfer chamber in the substrate processing system. The method further includes processing the first data to obtain second data. The second data includes a first indication of performance of the substrate processing system. The method further includes causing, in view of the second data, performance of a corrective actions associated with the substrate processing system.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2024071792A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
title IN-CHAMBER METROLOGY OF SUBSTRATES FOR PROCESS CHARACTERIZATION AND IMPROVEMENT
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T17%3A08%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Roy,%20Tapashree&rft.date=2024-02-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024071792A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true