SUBSTRATE PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

SUBSTRATE PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

A substrate processing method includes: (a) providing a substrate including a first region containing a first material including silicon and a second region containing a second material different from the first material; (b) etching the second region while forming a metal-containing layer on the fir...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WANG, Hsinkai, NORO, Motoki, OIKAWA, Kota, YOSHIMURA, Shota, SATO, Takuma
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Beschreibung
Zusammenfassung:A substrate processing method includes: (a) providing a substrate including a first region containing a first material including silicon and a second region containing a second material different from the first material; (b) etching the second region while forming a metal-containing layer on the first region, by a plasma generated from a processing gas including halogen and metal; (c) removing the metal-containing layer with a base.