NANOFABRICATION METHOD WITH CORRECTION OF DISTORTION WITHIN AN IMPRINT SYSTEM

A nanofabrication method comprises receiving information regarding in-plane distortion of a substrate, modeling target out-of-plane displacement as a summation of a plurality of geometric modes represented by a linear combination of basis functions, generating a first drop pattern of formable materi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Im, Se-Hyuk, Cherala, Anshuman
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A nanofabrication method comprises receiving information regarding in-plane distortion of a substrate, modeling target out-of-plane displacement as a summation of a plurality of geometric modes represented by a linear combination of basis functions, generating a first drop pattern of formable material based on the modeled out-of-plane displacement, generating a second drop pattern by merging the first drop pattern with a drop pattern based on a topography of the template and the substrate; dispensing drops of formable material onto the substrate according to the second drop pattern, and contacting the dispensed drops with the template to form a film. The plurality of geometric modes are modified using a plurality of unique predetermined correction coefficients. Each unique predetermined correction coefficient represents a relationship between an analytically determined amount of in-plane distortion and an empirically determined amount of in-plane distortion.