SEMICONDUCTOR DEVICE HAVING HIGH-VOLTAGE ISOLATION CAPACITOR

A semiconductor device including a high-voltage isolation capacitor and a mixed-signal integrated circuit, wherein the high-voltage isolation capacitor includes bottom electrodes, each spaced apart from another, disposed on a substrate; top electrodes disposed on corresponding ones of the bottom ele...

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Hauptverfasser: JEONG, Jong Yeul, SHEEN, Jeong Ho, KOO, Sang Geun, SHIN, Kang Sup
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creator JEONG, Jong Yeul
SHEEN, Jeong Ho
KOO, Sang Geun
SHIN, Kang Sup
description A semiconductor device including a high-voltage isolation capacitor and a mixed-signal integrated circuit, wherein the high-voltage isolation capacitor includes bottom electrodes, each spaced apart from another, disposed on a substrate; top electrodes disposed on corresponding ones of the bottom electrodes; an inter-metal dielectric layer disposed between the bottom electrodes and the top electrodes; and low bandgap dielectric layers disposed on the inter-metal dielectric layer. Each of the low bandgap dielectric layers is disposed below corresponding ones of the top electrodes, and the low bandgap dielectric layers are absent in the mixed-signal integrated circuit.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE HAVING HIGH-VOLTAGE ISOLATION CAPACITOR
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