SEMICONDUCTOR DEVICE HAVING HIGH-VOLTAGE ISOLATION CAPACITOR

SEMICONDUCTOR DEVICE HAVING HIGH-VOLTAGE ISOLATION CAPACITOR

A semiconductor device including a high-voltage isolation capacitor and a mixed-signal integrated circuit, wherein the high-voltage isolation capacitor includes bottom electrodes, each spaced apart from another, disposed on a substrate; top electrodes disposed on corresponding ones of the bottom ele...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: JEONG, Jong Yeul, SHEEN, Jeong Ho, KOO, Sang Geun, SHIN, Kang Sup
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device including a high-voltage isolation capacitor and a mixed-signal integrated circuit, wherein the high-voltage isolation capacitor includes bottom electrodes, each spaced apart from another, disposed on a substrate; top electrodes disposed on corresponding ones of the bottom electrodes; an inter-metal dielectric layer disposed between the bottom electrodes and the top electrodes; and low bandgap dielectric layers disposed on the inter-metal dielectric layer. Each of the low bandgap dielectric layers is disposed below corresponding ones of the top electrodes, and the low bandgap dielectric layers are absent in the mixed-signal integrated circuit.