CHLORINE-CONTAINING PRECURSORS FOR ION IMPLANTATION SYSTEMS AND RELATED METHODS

CHLORINE-CONTAINING PRECURSORS FOR ION IMPLANTATION SYSTEMS AND RELATED METHODS

A system and method for generating aluminum ions for implantation into a substrate. The system and method comprise flowing a chlorine-containing gas from a first vessel, optionally with a hydrogen-containing co-gas and optionally with a fluorine-containing co-gas, to an ion source chamber of an ion...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Despres, Joseph R, Tang, Ying
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Beschreibung
Zusammenfassung:A system and method for generating aluminum ions for implantation into a substrate. The system and method comprise flowing a chlorine-containing gas from a first vessel, optionally with a hydrogen-containing co-gas and optionally with a fluorine-containing co-gas, to an ion source chamber of an ion implantation device. The ion source chamber comprises a solid aluminum target material. At the ion source chamber, aluminum ions are generated for implantation into a substrate.