SEMICONDUCTOR VOID PLACEMENT
A method of semiconductor modelling includes determining for a virtual model of a layer of a semiconductor package, wherein the layer includes a metal layer, one or more first regions of the layer that do not satisfy a first layer design rule; adding first voids to the one or more first regions to s...
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creator | SNIDER, Todd JOSHI, Prakaram MOOLA, Srinivas |
description | A method of semiconductor modelling includes determining for a virtual model of a layer of a semiconductor package, wherein the layer includes a metal layer, one or more first regions of the layer that do not satisfy a first layer design rule; adding first voids to the one or more first regions to satisfy the first layer design rule; determining for the layer including the metal pattern and the first voids, one or more second regions of the layer that do not satisfy a second layer design rule, different from the first layer design rule; and adding second voids to the one or more second regions to satisfy the second layer design rule. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024061987A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024061987A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024061987A13</originalsourceid><addsrcrecordid>eNrjZJAJdvX1dPb3cwl1DvEPUgjz93RRCPBxdHb1dfUL4WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGJgZmhpYW5o6GxsSpAgAHZSHv</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR VOID PLACEMENT</title><source>esp@cenet</source><creator>SNIDER, Todd ; JOSHI, Prakaram ; MOOLA, Srinivas</creator><creatorcontrib>SNIDER, Todd ; JOSHI, Prakaram ; MOOLA, Srinivas</creatorcontrib><description>A method of semiconductor modelling includes determining for a virtual model of a layer of a semiconductor package, wherein the layer includes a metal layer, one or more first regions of the layer that do not satisfy a first layer design rule; adding first voids to the one or more first regions to satisfy the first layer design rule; determining for the layer including the metal pattern and the first voids, one or more second regions of the layer that do not satisfy a second layer design rule, different from the first layer design rule; and adding second voids to the one or more second regions to satisfy the second layer design rule.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; PHYSICS</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240222&DB=EPODOC&CC=US&NR=2024061987A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240222&DB=EPODOC&CC=US&NR=2024061987A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SNIDER, Todd</creatorcontrib><creatorcontrib>JOSHI, Prakaram</creatorcontrib><creatorcontrib>MOOLA, Srinivas</creatorcontrib><title>SEMICONDUCTOR VOID PLACEMENT</title><description>A method of semiconductor modelling includes determining for a virtual model of a layer of a semiconductor package, wherein the layer includes a metal layer, one or more first regions of the layer that do not satisfy a first layer design rule; adding first voids to the one or more first regions to satisfy the first layer design rule; determining for the layer including the metal pattern and the first voids, one or more second regions of the layer that do not satisfy a second layer design rule, different from the first layer design rule; and adding second voids to the one or more second regions to satisfy the second layer design rule.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAJdvX1dPb3cwl1DvEPUgjz93RRCPBxdHb1dfUL4WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGJgZmhpYW5o6GxsSpAgAHZSHv</recordid><startdate>20240222</startdate><enddate>20240222</enddate><creator>SNIDER, Todd</creator><creator>JOSHI, Prakaram</creator><creator>MOOLA, Srinivas</creator><scope>EVB</scope></search><sort><creationdate>20240222</creationdate><title>SEMICONDUCTOR VOID PLACEMENT</title><author>SNIDER, Todd ; JOSHI, Prakaram ; MOOLA, Srinivas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024061987A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>SNIDER, Todd</creatorcontrib><creatorcontrib>JOSHI, Prakaram</creatorcontrib><creatorcontrib>MOOLA, Srinivas</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SNIDER, Todd</au><au>JOSHI, Prakaram</au><au>MOOLA, Srinivas</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR VOID PLACEMENT</title><date>2024-02-22</date><risdate>2024</risdate><abstract>A method of semiconductor modelling includes determining for a virtual model of a layer of a semiconductor package, wherein the layer includes a metal layer, one or more first regions of the layer that do not satisfy a first layer design rule; adding first voids to the one or more first regions to satisfy the first layer design rule; determining for the layer including the metal pattern and the first voids, one or more second regions of the layer that do not satisfy a second layer design rule, different from the first layer design rule; and adding second voids to the one or more second regions to satisfy the second layer design rule.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING PHYSICS |
title | SEMICONDUCTOR VOID PLACEMENT |
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