INFRARED SENSOR, AND METHOD FOR MANUFACTURING INFRARED SENSOR

INFRARED SENSOR, AND METHOD FOR MANUFACTURING INFRARED SENSOR

An infrared sensor according to the present disclosure includes a transistor, a cavity layer, and a sensor layer. The cavity layer includes a cavity. The sensor layer includes a phononic crystal in which holes are arranged. In plan view, the infrared sensor includes a first region and a second regio...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TANAKA, HIROYUKI, FUJIKANE, MASAKI, TAKAHASHI, KOUHEI, HIMENO, ATSUSHI, TAMBO, NAOKI, NAKATA, YUKI, NAKAMURA, KUNIHIKO
Format: Patent
Sprache:eng
Schlagworte:
COLORIMETRY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
PHYSICS
RADIATION PYROMETRY
TESTING
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Beschreibung
Zusammenfassung:An infrared sensor according to the present disclosure includes a transistor, a cavity layer, and a sensor layer. The cavity layer includes a cavity. The sensor layer includes a phononic crystal in which holes are arranged. In plan view, the infrared sensor includes a first region and a second region. The first region includes a transistor. The second region includes the cavity. The cavity layer includes a flat major surface. The major surface is disposed around the cavity, and extends across both the first region and the second region. The sensor layer is disposed on the major surface.