Method and Device for Producing a SiC Solid Material

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps:Introducing at least a first source gas into a process chamber, said first source gas including Si,introducing at least one second source gas into the process chamber, the second source gas including C,electrically energizing at least one separator element disposed in the process chamber to heat the separator element,setting a deposition rate of more than 200 μm/h,where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, andwhere the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.