GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP VIA SUBSTRATE CONTACTS FOR SUB-FIN ELECTRICAL CONTACT

Gate-all-around integrated circuit structures having adjacent deep via substrate contact for sub-fin electrical contact are described. For example, an integrated circuit structure includes a conductive via on a semiconductor substrate. A vertical arrangement of horizontal nanowires is above a fin pr...

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Bibliographische Detailangaben

Hauptverfasser:	KOLLURU, Kalyan, LIN, Chung-Hsun, GOLONZKA, Oleg, JACK, Nathan, GUHA, Biswajeet, HSU, William, KAR, Ayan, THOMSON, Nicholas, PHOA, Kinyip, GHANI, Tahir, ORR, Benjamin
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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