POLARIMETRIC IMAGE SENSOR
The present description concerns a polarimetric image sensor formed inside and on top of a semiconductor substrate, the second comprising a plurality of pixels, each comprising: -a photosensitive region formed in the semiconductor substrate; -a diffraction structure formed on the side of an illumina...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The present description concerns a polarimetric image sensor formed inside and on top of a semiconductor substrate, the second comprising a plurality of pixels, each comprising: -a photosensitive region formed in the semiconductor substrate; -a diffraction structure formed on the side of an illumination surface of the photosensitive region; and -a polarization structure formed on the side of the diffraction structure opposite to the photosensitive region. |
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