HIGHLY VERTICALLY INTEGRATED NONVOLATILE MEMORY DEVICES AND MEMORY SYSTEMS INCLUDING THE SAME

A vertically-integrated nonvolatile memory device includes a peripheral circuit structure with a peripheral circuit therein, and cell array structure that is bonded to the peripheral circuit structure, and has a cell area and a connection area therein. The cell area includes a plurality of gate electrodes and a plurality of insulating layers alternately stacked, in the connection area. The plurality of gate electrodes include a cell stack having a staircase shape, a plurality of capacitor core contact structures configured to pass through the cell stack in the cell area, and a plurality of capacitor gate contact structures connected to the plurality of gate electrodes in the connection area. Each of the plurality of capacitor core contact structures includes: (i) a first core conductor electrically connected to the peripheral circuit, and (ii) a first cover insulating layer extending between the first core conductor and the plurality of gate electrodes, and constitutes a capacitor in which the first core conductor, the first cover insulating layer, and the plurality of gate electrodes are connected to the peripheral circuit.