CONTINUOUS COMPOSITIONAL GRADING FOR REALIZATION OF LOW CHARGE CARRIER BARRIERS IN ELECTRO-OPTICAL HETEROSTRUCTURE SEMICONDUCTOR DEVICES

CONTINUOUS COMPOSITIONAL GRADING FOR REALIZATION OF LOW CHARGE CARRIER BARRIERS IN ELECTRO-OPTICAL HETEROSTRUCTURE SEMICONDUCTOR DEVICES

Processes for continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices are provided. An example process includes forming, onto one or more semiconductor layers of an electro-optical semiconductor device, a first semicond...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LARSSON, Anders Gösta, MENTOVICH, Elad, CESTIER, Isabelle, ORON, Moshe B, STEINBERG, Oren, FÜLÖP, Attila
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Processes for continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices are provided. An example process includes forming, onto one or more semiconductor layers of an electro-optical semiconductor device, a first semiconductor layer associated with a first bandgap value and forming, onto the first semiconductor layer, a grading layer associated with a continuous compositional grading. The example method further includes forming, onto the grading layer, a second semiconductor layer associated with a second bandgap value. The second bandgap value is different than the first bandgap value.