HIGH-SPEED QUATERNARY MATERIAL-BASED PHOTODETECTOR

Photodetectors configured to detect light in a particular wavelength range and including a quaternary material are described herein. In some embodiments, the present invention may be directed to a photodetector that includes a collector material that is substantially transparent to the particular wa...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Steinberg, Oren, Oron, Moshe B, Cestier, Isabelle, Mentovich, Elad, Fülöp, Attila, Larsson, Anders Gösta
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:Photodetectors configured to detect light in a particular wavelength range and including a quaternary material are described herein. In some embodiments, the present invention may be directed to a photodetector that includes a collector material that is substantially transparent to the particular wavelength range and a quaternary material adjacent to the collector material, where the quaternary material functions as an absorber material and is lattice-matched to the collector material. A conduction band difference between the collector material and the quaternary material may be approximately zero. Additionally, or alternatively, the photodetector may include a peripheral layer adjacent to the quaternary material, where the peripheral layer is doped with carbon. In some embodiments, the photodetector may include an optical window configured for use with a multi-mode optical fiber.