SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a source region, a drain region, a gate region and a gate oxide. The gate region is disposed between the source region and the drain region. The gate oxide is disposed on the g...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHOU, CHIENIH, JONG, YUANG, CHEN, FEI-YUN, HUANG, HUNG-SHU, SONG, JHU-MIN, CHEN, JHIH-BIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a source region, a drain region, a gate region and a gate oxide. The gate region is disposed between the source region and the drain region. The gate oxide is disposed on the gate region. A bottom interface is between the gate region and the gate oxide, and an entire of the bottom interface is substantially flat.