Semiconductor Photoelectrode and Method for Manufacturing Same

Provided is a semiconductor photoelectrode that exhibits a catalytic function with light irradiation to cause an oxidation-reduction reaction. The semiconductor photoelectrode includes: a conductive or insulating substrate; a semiconductor thin film disposed on the surface of the substrate; a cataly...

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Bibliographische Detailangaben
Hauptverfasser:	Uzumaki, Yuya, Kono, Akihiro, Sato, Sayumi, Komatsu, Takeshi
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Provided is a semiconductor photoelectrode that exhibits a catalytic function with light irradiation to cause an oxidation-reduction reaction. The semiconductor photoelectrode includes: a conductive or insulating substrate; a semiconductor thin film disposed on the surface of the substrate; a catalyst layer disposed on the surface of the semiconductor thin film; a light transmission layer disposed in a lattice shape on the surface of the catalyst layer; and a protective layer disposed to cover the rear surface of the substrate and the side surfaces of the substrate and the semiconductor thin film. The semiconductor photoelectrode having another configuration includes a second semiconductor thin film disposed between the semiconductor thin film and the catalyst layer.