INTEGRATED CIRCUIT, METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT, WAFER AND METHOD FOR MANUFACTURING A WAFER

INTEGRATED CIRCUIT, METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT, WAFER AND METHOD FOR MANUFACTURING A WAFER

An integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch, wherein at least a part of the phase change switch is provided below the first metallization layer, wherein the first metallization l...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Taddiken, Hans, Glacer, Christoph, Heiss, Dominik, Kadow, Christoph
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:An integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch, wherein at least a part of the phase change switch is provided below the first metallization layer, wherein the first metallization layer is provided laterally adjacent to the phase change switch, wherein the phase change switch comprises a heater, and wherein the heater and a part of the transistor are each provided in a lower-level interconnect layer of the integrated circuit.