SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor device includes a first and a second nitride-based semiconductor layers, a gate electrode, and a doped nitride-based semiconductor layer. The doped nitride-based semiconductor layer is disposed between the second nitride-based semiconductor layer and the gate electrode. The doped nit...

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Bibliographische Detailangaben
Hauptverfasser:	DU, Ziming, YOU, Jheng-Sheng, DU, Weixing, LI, Changan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device includes a first and a second nitride-based semiconductor layers, a gate electrode, and a doped nitride-based semiconductor layer. The doped nitride-based semiconductor layer is disposed between the second nitride-based semiconductor layer and the gate electrode. The doped nitride-based semiconductor layer has a pair of opposite ledge portions free from coverage of the gate electrode and a central portion therebetween. The second nitride-based semiconductor layer has a first portion beneath the central portion and a second portion beneath the ledge portion, and the second nitride-based semiconductor layer has a doping concentration of a dopant that selected from a highly electronegative group, in which the doping concentration from the first portion to the second portion increases.