METAL CAP FOR CONTACT RESISTANCE REDUCTION

A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a su...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Mebarki, Bencherki, Kuratomi, Takashi, Lee, Joung Joo, Wu, Liqi, Tang, Xianmin, Hou, Wenting, Gelatos, Avgerinos V, Lei, Jianxin, Hung, Raymond Hoiman, Ha, Tae Hong
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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