METAL CAP FOR CONTACT RESISTANCE REDUCTION

METAL CAP FOR CONTACT RESISTANCE REDUCTION

A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a su...

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Bibliographische Detailangaben
Hauptverfasser: Mebarki, Bencherki, Kuratomi, Takashi, Lee, Joung Joo, Wu, Liqi, Tang, Xianmin, Hou, Wenting, Gelatos, Avgerinos V, Lei, Jianxin, Hung, Raymond Hoiman, Ha, Tae Hong
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a substrate; in the absence of an air break after the depositing of the metal silicide layer, preparing a metal cap layer directly on the metal silicide layer; and depositing a conductor on the metal cap layer.