COMPOSITION AND METHOD FOR CONDUCTING A MATERIAL REMOVING OPERATION

In one embodiment, a polishing composition can comprise abrasive particles including zirconia, an oxidizing agent including hydroxylamine and water. The polishing composition can have a high copper removal rate of at least 3500 Å/min, and a polishing selectivity of copper to silicon dioxide(Cu:SiO2)...

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Bibliographische Detailangaben
Hauptverfasser:	ZHOU, Renjie, FU, Lin, KUAN, Chun-Lung
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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Beschreibung
Zusammenfassung:	In one embodiment, a polishing composition can comprise abrasive particles including zirconia, an oxidizing agent including hydroxylamine and water. The polishing composition can have a high copper removal rate of at least 3500 Å/min, and a polishing selectivity of copper to silicon dioxide(Cu:SiO2) can be at least 2.5:1. In another embodiment, a combination product can comprise a first polishing composition and a second polishing composition, wherein each of the first polishing composition and the second polishing composition can comprise abrasive particles including zirconia and an oxidizing agent including hydroxylamine, wherein a hydroxylamine weight % ratio of the first polishing composition to the second polishing composition may be at least 5:1.