PROCESS FOR MANUFACTURING A PIEZOELECTRIC STRUCTURE FOR A RADIOFREQUENCY DEVICE AND WHICH CAN BE USED TO TRANSFER A PIEZOELECTRIC LAYER, AND PROCESS FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER

PROCESS FOR MANUFACTURING A PIEZOELECTRIC STRUCTURE FOR A RADIOFREQUENCY DEVICE AND WHICH CAN BE USED TO TRANSFER A PIEZOELECTRIC LAYER, AND PROCESS FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER

A method of manufacturing a piezoelectric structure comprises providing a substrate of piezoelectric material, providing a carrier substrate, depositing a dielectric bonding layer at a temperature lower than or equal to 300° C. on a single side of the substrate of piezoelectric material, a step of j...

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Bibliographische Detailangaben
Hauptverfasser: Tavel, Brice, Butaud, Eric, Doutre-Roussel, Laurence, Castex, Arnaud
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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Beschreibung
Zusammenfassung:A method of manufacturing a piezoelectric structure comprises providing a substrate of piezoelectric material, providing a carrier substrate, depositing a dielectric bonding layer at a temperature lower than or equal to 300° C. on a single side of the substrate of piezoelectric material, a step of joining the substrate of piezoelectric material to the carrier substrate via the dielectric bonding layer, a thinning step for forming the piezoelectric structure, which comprises a layer of piezoelectric material joined to a carrier substrate.