PHOTODIODE DEVICE WITH HIGH RESPONSIVITY

A photodiode device includes a semiconductor substrate with a main surface, the semiconductor substrate being of a first type of electric conductivity. At least one doped well of a second type of electric conductivity is arranged at the main surface of the substrate, the second type of electric cond...

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Bibliographische Detailangaben
Hauptverfasser:	Dierschke, Eugene G, Roger, Frederic, Meinhardt, Gerald, Jonak-Auer, Ingrid
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A photodiode device includes a semiconductor substrate with a main surface, the semiconductor substrate being of a first type of electric conductivity. At least one doped well of a second type of electric conductivity is arranged at the main surface of the substrate, the second type of electric conductivity being opposite to the first type of electric conductivity. The at least one doped well and the substrate are electrically contactable. A cover layer is arranged on the main surface of the substrate. The cover layer is at least one of an epi-layer of the first type of electric conductivity and a dielectric surface passivation layer comprising a plurality of space charges, or a combination thereof.