SWITCHING DEVICE AND SWITCHING MODULE

Provided is a switching device 1 including a drain fin 103 arranged below a semiconductor chip 101 via a common mode current suppression structure 2. The common mode current suppression structure 2 includes a first insulating layer 2a joined on the drain fin 103, an electric conductive layer 2b joined on the first insulating layer 12a, a second insulating layer 2c joined on the electric conductive layer 2b, and an electrode conductor 2d joined on an upper surface of the second insulating layer 2c and joined to a drain electrode 101a of the semiconductor chip 101. The electric conductive layer 2b is electrically connected to a source electrode 101b of the semiconductor chip 101.