ATOMIC LAYER ETCHING (ALE) APPARATUS AND ALE METHOD BASED ON THE APPARATUS

ATOMIC LAYER ETCHING (ALE) APPARATUS AND ALE METHOD BASED ON THE APPARATUS

Provided is an atomic layer etching (ALE) method including operation (a) of loading a substrate having a first surface and a second surface facing each other onto a chuck, operation (b) of cooling the substrate to a first temperature through a cooling fluid, operation (c) of forming a modified layer...

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Hauptverfasser: Song, Sunjoong, Chae, Seungcheol, Shin, Seungmin, Park, Kijong, Kim, Joonyoung
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Song, Sunjoong
Chae, Seungcheol
Shin, Seungmin
Park, Kijong
Kim, Joonyoung
description Provided is an atomic layer etching (ALE) method including operation (a) of loading a substrate having a first surface and a second surface facing each other onto a chuck, operation (b) of cooling the substrate to a first temperature through a cooling fluid, operation (c) of forming a modified layer on the substrate through a reaction between a first source gas and the first surface of the substrate by spraying the first source gas toward the substrate from a shower head positioned above the chuck, operation (d) of heating the substrate to a second temperature through a laser beam, and operation (e) of removing the modified layer of the substrate through a reaction between a second source gas and the modified layer of the substrate by spraying the second source gas from the shower head toward the first surface of the substrate.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title ATOMIC LAYER ETCHING (ALE) APPARATUS AND ALE METHOD BASED ON THE APPARATUS
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