ATOMIC LAYER ETCHING (ALE) APPARATUS AND ALE METHOD BASED ON THE APPARATUS

Provided is an atomic layer etching (ALE) method including operation (a) of loading a substrate having a first surface and a second surface facing each other onto a chuck, operation (b) of cooling the substrate to a first temperature through a cooling fluid, operation (c) of forming a modified layer on the substrate through a reaction between a first source gas and the first surface of the substrate by spraying the first source gas toward the substrate from a shower head positioned above the chuck, operation (d) of heating the substrate to a second temperature through a laser beam, and operation (e) of removing the modified layer of the substrate through a reaction between a second source gas and the modified layer of the substrate by spraying the second source gas from the shower head toward the first surface of the substrate.