REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Provided is a reflective mask blank that makes it possible to form a transfer pattern having a fine pattern shape on a transferred substrate and that is used for manufacturing a reflective mask having a transfer pattern capable of performing EUV exposure with a high throughput.A reflective mask blan...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	HAMAMOTO, Kazuhiro
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Provided is a reflective mask blank that makes it possible to form a transfer pattern having a fine pattern shape on a transferred substrate and that is used for manufacturing a reflective mask having a transfer pattern capable of performing EUV exposure with a high throughput.A reflective mask blank comprises: a substrate; a multilayer reflective film on the substrate; and an absorber film on the multilayer reflective film. The absorber film comprises iridium (Ir) and an additive element. The additive element is at least one selected from boron (B), silicon (Si), phosphorus (P), titanium (Ti), germanium (Ge), arsenic (As), selenium (Se), niobium (Nb), molybdenum (Mo), ruthenium (Ru), and tantalum (Ta). The content of the iridium (Ir) in the absorber film is more than 50 atom %.