COMPOSITE SUBSTRATE

A composite substrate that is obtained by bonding a silicon (Si) wafer having an interstitial oxygen concentration of 2 to 10 ppma to a piezoelectric material substrate as a support substrate, and thinning the piezoelectric material substrate after the bonding.

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Bibliographische Detailangaben
Hauptverfasser:	AKIYAMA, Shoji, SHIRAI, Shozo, TANNO, Masayuki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRONIC CIRCUITRY ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A composite substrate that is obtained by bonding a silicon (Si) wafer having an interstitial oxygen concentration of 2 to 10 ppma to a piezoelectric material substrate as a support substrate, and thinning the piezoelectric material substrate after the bonding.