SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME

A semiconductor device may include a two-dimensional material layer including a two-dimensional semiconductor material having a polycrystalline structure; metallic nanoparticles partially on the two-dimensional material layer; a source electrode and a drain electrode respectively on both sides of th...

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Bibliographische Detailangaben
Hauptverfasser: SHIN, Keunwook, KWON, Junyoung, YOO, Minseok, SEOL, Minsu
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device may include a two-dimensional material layer including a two-dimensional semiconductor material having a polycrystalline structure; metallic nanoparticles partially on the two-dimensional material layer; a source electrode and a drain electrode respectively on both sides of the two-dimensional material layer; and a gate insulating layer and a gate electrode on the two-dimensional material layer between the source electrode and the drain electrode.